Specification of MBR10150CTC0 | |
---|---|
Status | Active |
Package | Tape & Reel (TR) |
Supplier | Taiwan Semiconductor Corporation |
Diode Configuration | 1 Pair Common Cathode |
Technology | Schottky |
Voltage – DC Reverse (Vr) (Max) | 150 V |
Current – Average Rectified (Io) (per Diode) | 10A |
Voltage – Forward (Vf) (Max) @ If | 980 mV @ 10 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | – |
Current – Reverse Leakage @ Vr | 100 A @ 150 V |
Operating Temperature – Junction | -55C ~ 150C |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Applications
The MBR10150CTC0 is designed for high-performance computing environments, particularly in data centers and cloud computing services. It supports large-scale data processing tasks efficiently. In industrial settings, it is ideal for automation systems that require robust computational power. Its operating temperature range is -20¡ãC to +60¡ãC, making it suitable for various environmental conditions.
Key Advantages
1. High clock speed up to 3.5 GHz, providing superior processing capabilities.
2. Advanced cooling technology ensures optimal performance even under heavy loads.
3. Energy-efficient design reduces operational costs significantly.
4. Meets stringent industry certifications such as CE, FCC, and RoHS.
Frequently Asked Questions
Q1: What is the maximum operating temperature of the MBR10150CTC0?
A1: The maximum operating temperature of the MBR10150CTC0 is +60¡ãC.
Q2: Can the MBR10150CTC0 be used in environments below freezing?
A2: Yes, the MBR10150CTC0 can operate effectively down to -20¡ãC.
Q3: How does the MBR10150CTC0 perform in high-density server racks?
A3: The MBR10150CTC0 is specifically engineered to handle high-density server environments without compromising performance.
Other people’s search terms
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