Specification of IRFBF30L | |
---|---|
Status | Active |
Package | Tube |
Supplier | Vishay Siliconix |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900 V |
Current – Continuous Drain (Id) @ 25C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.7Ohm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250A |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
Vgs (Max) | 20V |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
FET Feature | – |
Power Dissipation (Max) | – |
Operating Temperature | -55C ~ 150C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, IPak, TO-262AA |
Applications
The IRFBF30L is versatile and can be utilized across various industries due to its robust design and high performance.
- Automotive: Used in powertrain systems requiring precise control over electrical components at temperatures up to 125¡ãC.
- Industrial: Ideal for machinery that demands reliable operation within a wide range of environmental conditions, from -40¡ãC to +85¡ãC.
- Consumer Electronics: Suitable for devices like smartphones and laptops where high-speed switching and low-power consumption are critical.
- Telecommunications: Essential in network equipment where stability and efficiency are paramount.
- Medical Devices: Used in medical imaging and monitoring systems that require high precision and reliability.
Key Advantages
1. High Switching Frequency: Capable of operating at frequencies up to 600 kHz, which enhances system efficiency and reduces size.
2. Advanced Gate Drive Technology: Offers superior control over the device¡¯s operation, leading to improved performance and reduced losses.
3. Low On-State Resistance: Reduces conduction losses, contributing to higher overall system efficiency.
4. Compliance with Industry Standards: Meets stringent safety and quality requirements, ensuring reliability and safety in diverse applications.
Frequently Asked Questions
Q1: What is the maximum operating temperature of the IRFBF30L?
A1: The IRFBF30L operates effectively within a temperature range of -40¡ãC to +85¡ãC, making it suitable for a variety of environments.
Q2: Can the IRFBF30L be used in high-frequency applications?
A2: Yes, the IRFBF30L is designed to handle high switching frequencies up to 600 kHz, making it ideal for high-frequency applications such as power supplies and inverters.
Q3: In which specific scenarios would you recommend using the IRFBF30L?
A3: The IRFBF30L is recommended for scenarios requiring high-performance switching capabilities, such as in automotive power electronics, industrial control systems, and consumer electronics where space and efficiency are crucial.
Other people’s search terms
– High-frequency MOSFETs
– Low-on resistance MOSFET
– Automotive power electronics
– Industrial switching solutions
– Medical device components