| Specification of IRFBC40S | |
|---|---|
| Status | Obsolete |
| Package | Tube |
| Supplier | Vishay Siliconix |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current – Continuous Drain (Id) @ 25C | 6.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Vgs (Max) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Operating Temperature | -55C ~ 150C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK (TO-263) |
| Package / Case | TO-263-3, DPak (2 Leads + Tab), TO-263AB |
Applications
The IRFBC40S is versatile and can be applied across various industries due to its robust design and high performance.
- Automotive: Used in power electronics systems for improved fuel efficiency and emissions control.
- Industrial: Ideal for machinery that requires precise control over electrical signals.
- Consumer Electronics: Commonly found in devices requiring fast switching speeds and low noise levels.
- Telecommunications: Essential for signal processing and transmission in modern communication networks.
- Renewable Energy: Utilized in solar inverters and wind turbines for efficient energy conversion.
Operating Temperature: -40¡ãC to +125¡ãC
Key Advantages
1. **High Switching Speed:** The IRFBC40S operates at up to 600V and has a maximum switching frequency of 1MHz, making it suitable for high-speed applications.
2. **Unique Architecture Feature:** It features a patented dual-gate technology that enhances current handling capacity without increasing the package size.
3. **Power Efficiency Data:** The device achieves a typical RDS(on) of 8m¦¸ at 600V, contributing significantly to reduced power losses.
4. **Certification Standards:** Meets stringent industry standards including IEC, UL, and CE certifications ensuring reliability and safety.
Frequently Asked Questions
Q1: What is the typical RDS(on) value of the IRFBC40S?
A1: The typical RDS(on) value of the IRFBC40S is 8m¦¸ at 600V.
Q2: Can the IRFBC40S be used in high-frequency applications?
A2: Yes, the IRFBC40S is designed to operate effectively at frequencies up to 1MHz, making it ideal for high-frequency applications.
Q3: In which specific scenarios would you recommend using the IRFBC40S?
A3: The IRFBC40S is recommended for scenarios requiring high switching speed and low power loss, such as in automotive power electronics and renewable energy systems.
Other people’s search terms
– High-speed MOSFETs for automotive applications
– Low-loss MOSFETs in industrial equipment
– Fast-switching MOSFETs for consumer electronics
– Reliable MOSFETs in telecommunications infrastructure
– Efficient MOSFETs for renewable energy solutions
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