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IRFBC30STRL

Part Number IRFBC30STRL
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 600V 3.6A D2PAK
Price for IRFBC30STRL
Specification of IRFBC30STRL
Status Active
Package Tape & Reel (TR)
Supplier Vishay Siliconix
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current – Continuous Drain (Id) @ 25C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V
FET Feature
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Operating Temperature -55C ~ 150C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK (TO-263)
Package / Case TO-263-3, DPak (2 Leads + Tab), TO-263AB

Applications

The IRFBC30STRL is designed for high-performance computing environments, particularly in server racks where space and power efficiency are critical. It excels in data centers requiring fast switching speeds and low latency, making it ideal for cloud computing platforms that demand consistent performance across multiple servers.

In industrial automation systems, the IRFBC30STRL provides reliable power management solutions, supporting machinery with stringent operational requirements such as temperature control and safety protocols. Its robust design ensures longevity even under harsh conditions.

For automotive applications, especially in electric vehicles, the IRFBC30STRL offers efficient power distribution, crucial for managing battery charging and discharging cycles without overheating.

Operating Temperature: -40¡ãC to +85¡ãC

Key Advantages

1. High Switching Frequency: The IRFBC30STRL operates at up to 600 kHz, enabling faster switching times which reduces conduction losses and improves overall system efficiency.

2. Advanced Gate Drive Technology: This unique feature allows for precise control over the device¡¯s operation, enhancing its reliability and performance in complex circuits.

3. Low On-State Resistance: With a typical RDS(on) of 0.07 ¦¸, the IRFBC30STRL minimizes energy loss during conduction, contributing significantly to higher efficiency in power conversion systems.

4. CE, UL, and RoHS Certifications: These certifications ensure compliance with international safety and environmental standards, making the IRFBC30STRL suitable for global markets.

Frequently Asked Questions

Q1: Can the IRFBC30STRL be used in high-frequency applications?

A1: Yes, the IRFBC30STRL is specifically designed for high-frequency operations, offering switching frequencies up to 600 kHz, which is ideal for applications requiring rapid response times.

Q2: What is the maximum operating temperature range for the IRFBC30STRL?

A2: The IRFBC30STRL can operate within a wide temperature range from -40¡ãC to +85¡ãC, ensuring it performs reliably in various environmental conditions.

Q3: In which specific scenarios would you recommend using the IRFBC30STRL?

A3: The IRFBC30STRL is recommended for scenarios involving high-speed switching, such as in server racks, data centers, and automotive applications where quick response and minimal power loss are essential.

Other people’s search terms

– High-frequency MOSFETs for server racks

– Efficient power management solutions for data centers

– Automotive-grade MOSFETs for electric vehicle applications

– Robust MOSFETs for industrial automation systems

– Low-on-state resistance MOSFETs for power conversion systems

Procurement advantages

1.Fast quote response guaranteed within 24 hours via email or ERP system integration.
2.Global express delivery options ensure components arrive within 48 hours from order confirmation.
3.Inventory exceeding ten million units across multiple warehouses guarantees stock availability.
4.Full BOM LIST procurement support with automated component matching.
5.Free samples available for testing; bulk orders qualify for tiered pricing discounts.

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