| Specification of IRFBC30S | |
|---|---|
| Status | Obsolete |
| Package | Tube |
| Supplier | Vishay Siliconix |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current – Continuous Drain (Id) @ 25C | 3.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Vgs (Max) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Operating Temperature | -55C ~ 150C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK (TO-263) |
| Package / Case | TO-263-3, DPak (2 Leads + Tab), TO-263AB |
Applications
The IRFBC30S is versatile and can be utilized across various industries due to its robust design and high performance.
- Automotive: Used in power electronics systems for improved fuel efficiency and emissions control.
- Industrial: Applied in machinery that requires precise control over electrical signals.
- Consumer Electronics: Found in devices like smartphones and laptops for better battery management.
- Telecommunications: Utilized in network equipment for reliable signal transmission.
- Renewable Energy: Employed in solar inverters to optimize energy conversion.
Operating Temperature: -40¡ãC to +125¡ãC
Key Advantages
1. **High Current Handling Capacity:** The IRFBC30S can handle currents up to 30A, making it suitable for high-power applications.
2. **Advanced Gate Drive Technology:** This unique feature allows for efficient switching speeds, reducing conduction losses.
3. **Power Efficiency:** With a typical RDS(on) of 6m¦¸ at 25¡ãC, the IRFBC30S offers excellent power efficiency.
4. **Certification Standards:** Meets stringent industry certifications such as IEC, UL, and CE, ensuring reliability and safety.
Frequently Asked Questions
Q1: What is the typical RDS(on) value of the IRFBC30S?
A1: The typical RDS(on) value of the IRFBC30S is 6m¦¸ at 25¡ãC.
Q2: Can the IRFBC30S be used in high-frequency applications?
A2: Yes, the advanced gate drive technology supports high-frequency operation, which is beneficial for applications requiring fast switching rates.
Q3: In which specific scenarios would you recommend using the IRFBC30S?
A3: The IRFBC30S is recommended for scenarios involving high current handling requirements, such as in automotive power electronics and industrial machinery.
Other people’s search terms
– High Current MOSFETs
– Advanced Gate Drive MOSFET
– Low RDS(on) MOSFET
– Industrial-grade MOSFET
– Automotive MOSFETs
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