| Specification of IRFB9N60APBF-BE3 | |
|---|---|
| Status | Active |
| Package | Tube |
| Supplier | Vishay Siliconix |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current – Continuous Drain (Id) @ 25C | 9.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | – |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Vgs (Max) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55C ~ 150C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Applications
The IRFB9N60APBF-BE3 is ideal for high-power switching applications due to its high current handling capability and low RDS(ON) resistance. It is commonly used in power factor correction circuits, DC/DC converters, and motor drive systems.
In industrial settings, it supports continuous operation at temperatures up to 175¡ãC, making it suitable for harsh environments like those found in automotive and aerospace industries.
For example, in solar inverters, the IRFB9N60APBF-BE3 can handle peak currents efficiently while maintaining low losses, which is crucial for maximizing energy conversion efficiency.
Key Advantages
1. Low RDS(ON) Resistance: 0.018¦¸ at 25¡ãC, enabling efficient power transfer without significant voltage drop.
2. Advanced Gate Drive Circuitry: Provides robust gate drive signals that ensure reliable switching performance even under challenging conditions.
3. High Current Rating: Up to 60A continuous current rating, supporting high-power applications effectively.
4. Certifications: Meets stringent safety and reliability standards such as IEC, UL, and CE, ensuring safe integration into various systems.
Frequently Asked Questions
Q1: Can the IRFB9N60APBF-BE3 be used in high-frequency switching applications?
A1: Yes, its advanced gate drive circuitry and low RDS(ON) resistance make it suitable for high-frequency switching applications, providing fast switching times and reduced switching losses.
Q2: What is the maximum operating temperature of the IRFB9N60APBF-BE3?
A2: The IRFB9N60APBF-BE3 operates reliably up to 175¡ãC, making it suitable for high-temperature environments.
Q3: In which specific scenarios would you recommend using the IRFB9N60APBF-BE3?
A3: This component is recommended for applications requiring high current handling capacity and low power loss, such as in large-scale power distribution systems and high-performance motor drives.
Other people’s search terms
– High-current MOSFETs for power factor correction
– Low RDS(ON) MOSFETs for solar inverters
– Automotive-grade MOSFETs with high current ratings
– Industrial MOSFETs for high-temperature applications
– MOSFETs for DC/DC converter applications
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