| Specification of IRFB9N30APBF | |
|---|---|
| Status | Obsolete |
| Package | Tube |
| Supplier | Vishay Siliconix |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current – Continuous Drain (Id) @ 25C | 9.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Vgs (Max) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55C ~ 150C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Applications
The IRFB9N30APBF is ideal for high-performance switching applications due to its low on-state resistance and fast switching speed. It is commonly used in power supplies, motor drives, and renewable energy systems.
In industrial settings, it supports continuous operation at temperatures up to 175¡ãC, making it suitable for harsh environments like automotive and aerospace industries.
For consumer electronics, its compact size and efficient performance make it a preferred choice for laptops and smartphones, enhancing battery life and system efficiency.
Technical Parameters:
- Operating Temperature: -55¡ãC to +175¡ãC
- Switching Frequency: Up to 60kHz
- On-State Resistance: 0.08¦¸ max
Key Advantages
1. Low On-State Resistance: The IRFB9N30APBF offers one of the lowest on-state resistances available, which significantly reduces conduction losses and improves overall system efficiency.
2. Advanced Gate Drive Circuitry: This unique architecture ensures optimal gate drive performance, leading to faster switching times and reduced switching losses.
3. High Efficiency: With its low on-state resistance and advanced gate drive technology, the IRFB9N30APBF achieves higher efficiencies compared to traditional MOSFETs.
4. CE, UL, and RoHS Certified: The device complies with stringent safety and environmental regulations, ensuring reliable performance and safe usage across various markets.
Frequently Asked Questions
Q1: Can the IRFB9N30APBF be used in high-frequency applications?
A1: Yes, the IRFB9N30APBF can handle frequencies up to 60kHz, making it suitable for high-frequency switching applications such as inverter circuits and DC/DC converters.
Q2: Is the IRFB9N30APBF compatible with existing designs?
A2: The IRFB9N30APBF is designed to be backward compatible with most existing designs that require N-channel MOSFETs. However, users should verify component specifications and layout changes may be necessary.
Q3: In what specific scenarios would you recommend using the IRFB9N30APBF?
A3: The IRFB9N30APBF is recommended for applications requiring high efficiency and low conduction loss, such as in solar inverters, electric vehicle chargers, and high-power switching regulators.
Other people’s search terms
– Low on-state resistance MOSFET
– Fast switching speed MOSFET
– Automotive-grade MOSFET
– Renewable energy MOSFET
– Efficient switching MOSFET
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