Specification of IRFB61N15DPBF | |
---|---|
Status | Active |
Series | HEXFET? |
Package | Bulk |
Supplier | Rochester Electronics, LLC |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V |
Current – Continuous Drain (Id) @ 25C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | – |
Rds On (Max) @ Id, Vgs | 32mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250A |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Vgs (Max) | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 25 V |
FET Feature | – |
Power Dissipation (Max) | 2.4W (Ta), 330W (Tc) |
Operating Temperature | -55C ~ 175C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Applications
The IRFB61N15DPBF is ideal for high-performance power conversion systems in industrial automation, renewable energy solutions like solar inverters, and automotive electronics due to its robustness and efficiency.
Operating Temperature: -55¡ãC to +175¡ãC
Key Advantages
1. High Current Handling Capacity (up to 61A)
2. Advanced Gate Drive Technology
3. Low On-State Resistance (0.018¦¸ at 25¡ãC)
4. CE, UL, and RoHS Certifications
Frequently Asked Questions
Q1: What is the maximum operating temperature of the IRFB61N15DPBF?
A1: The maximum operating temperature of the IRFB61N15DPBF is up to 175¡ãC.
Q2: Can the IRFB61N15DPBF be used in high-temperature environments?
A2: Yes, it can operate effectively within a wide range from -55¡ãC to +175¡ãC.
Q3: In which specific scenarios would you recommend using the IRFB61N15DPBF?
A3: The IRFB61N15DPBF is recommended for applications requiring high current handling capacity and low resistance, such as in solar inverters and industrial machinery.
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