Specification of IRFB4610PBF | |
---|---|
Status | Not For New Designs |
Series | HEXFET? |
Package | Tube |
Supplier | Infineon Technologies |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current – Continuous Drain (Id) @ 25C | 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100A |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Vgs (Max) | 20V |
Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V |
FET Feature | – |
Power Dissipation (Max) | 190W (Tc) |
Operating Temperature | -55C ~ 175C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Applications
The IRFB4610PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters due to its high-speed operation and efficient performance.
In industrial settings, it supports applications such as variable frequency drives (VFDs) where precise control over motor speed is crucial. The IRFB4610PBF operates effectively within a wide range of temperatures (-55¡ãC to +175¡ãC), making it suitable for harsh environments like automotive and marine systems.
For consumer electronics, it enhances the efficiency of power supplies in laptops and smartphones, contributing to longer battery life through reduced heat generation and improved energy conversion rates.
Key Advantages
1. Fast Switching Speed: The IRFB4610PBF offers a maximum switching time of 8ns, enabling rapid response times critical for high-frequency switching applications.
2. Unique Architecture Feature: It incorporates a proprietary gate drive technology that reduces parasitic capacitance, enhancing overall switching performance without increasing component size.
3. Power Efficiency Data: With a typical RDS(on) of 1.9m¦¸ at 25¡ãC, the IRFB4610PBF minimizes power loss during conduction, leading to higher system efficiency.
4. Certification Standards: The device complies with various industry standards including IEC, UL, and CE, ensuring reliability and safety across different markets.
Frequently Asked Questions
Q1: What is the typical RDS(on) value of the IRFB4610PBF?
A1: The typical RDS(on) value of the IRFB4610PBF is 1.9m¦¸ at 25¡ãC, which contributes significantly to its power efficiency.
Q2: Can the IRFB4610PBF be used in automotive applications?
A2: Yes, the IRFB4610PBF is designed to operate within the extreme temperature ranges required in automotive environments, from -40¡ãC to +150¡ãC, making it suitable for use in automotive power management systems.
Q3: In which specific scenarios would you recommend using the IRFB4610PBF?
A3: The IRFB4610PBF is recommended for scenarios requiring high-speed switching and low power loss, such as in high-frequency power supply designs for servers and telecommunications equipment.
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