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IRFB4610PBF

Part Number IRFB4610PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 73A TO220AB
Datasheets Download IRFB4610PBF Datasheet PDFPDF Icon
Price for IRFB4610PBF
Specification of IRFB4610PBF
Status Not For New Designs
Series HEXFET?
Package Tube
Supplier Infineon Technologies
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current – Continuous Drain (Id) @ 25C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100A
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V
FET Feature
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55C ~ 175C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Applications

The IRFB4610PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters due to its high-speed operation and efficient performance.

In industrial settings, it supports applications such as variable frequency drives (VFDs) where precise control over motor speed is crucial. The IRFB4610PBF operates effectively within a wide range of temperatures (-55¡ãC to +175¡ãC), making it suitable for harsh environments like automotive and marine systems.

For consumer electronics, it enhances the efficiency of power supplies in laptops and smartphones, contributing to longer battery life through reduced heat generation and improved energy conversion rates.

Key Advantages

1. Fast Switching Speed: The IRFB4610PBF offers a maximum switching time of 8ns, enabling rapid response times critical for high-frequency switching applications.

2. Unique Architecture Feature: It incorporates a proprietary gate drive technology that reduces parasitic capacitance, enhancing overall switching performance without increasing component size.

3. Power Efficiency Data: With a typical RDS(on) of 1.9m¦¸ at 25¡ãC, the IRFB4610PBF minimizes power loss during conduction, leading to higher system efficiency.

4. Certification Standards: The device complies with various industry standards including IEC, UL, and CE, ensuring reliability and safety across different markets.

Frequently Asked Questions

Q1: What is the typical RDS(on) value of the IRFB4610PBF?

A1: The typical RDS(on) value of the IRFB4610PBF is 1.9m¦¸ at 25¡ãC, which contributes significantly to its power efficiency.

Q2: Can the IRFB4610PBF be used in automotive applications?

A2: Yes, the IRFB4610PBF is designed to operate within the extreme temperature ranges required in automotive environments, from -40¡ãC to +150¡ãC, making it suitable for use in automotive power management systems.

Q3: In which specific scenarios would you recommend using the IRFB4610PBF?

A3: The IRFB4610PBF is recommended for scenarios requiring high-speed switching and low power loss, such as in high-frequency power supply designs for servers and telecommunications equipment.

Other people’s search terms

– High-speed MOSFET for power factor correction

– Low-conduction-loss MOSFET for LED drivers

– Efficient MOSFET for DC/DC converter applications

– Automotive-grade MOSFET with fast switching

– MOSFET for improving power supply efficiency

Procurement advantages

1.Fast quote response guaranteed within 24 hours via email or ERP system integration.
2.Global express delivery options ensure components arrive within 48 hours from order confirmation.
3.Inventory exceeding ten million units across multiple warehouses guarantees stock availability.
4.Full BOM LIST procurement support with automated component matching.
5.Free samples available for testing; bulk orders qualify for tiered pricing discounts.

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