| Specification of IRFB4510GPBF | |
|---|---|
| Status | Obsolete |
| Series | HEXFET? |
| Package | Tube |
| Supplier | Infineon Technologies |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current – Continuous Drain (Id) @ 25C | 62A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 37A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100A |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Vgs (Max) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3180 pF @ 50 V |
| FET Feature | – |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55C ~ 175C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Applications
The IRFB4510GPBF is ideal for high-power switching applications due to its low on-state resistance and fast switching speed. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters.
In industrial settings, it supports continuous operation at temperatures up to 175¡ãC, making it suitable for harsh environments like automotive and aerospace applications.
For consumer electronics, its compact size and efficient performance make it a preferred choice for portable devices requiring high power density.
Technical Parameters:
- Operating Temperature: -55¡ãC to +175¡ãC
- Switching Frequency: Up to 60kHz
- On-State Resistance: 0.08¦¸ max
Key Advantages
1. Low On-State Resistance: The IRFB4510GPBF offers one of the lowest on-state resistances available, which significantly reduces conduction losses and improves overall system efficiency.
2. Advanced Gate Drive Circuit: This unique architecture ensures optimal gate drive performance, enhancing switching speed and reliability.
3. High Efficiency: With a typical efficiency of over 98%, the IRFB4510GPBF minimizes energy loss during operation, making it highly cost-effective.
4. CE, UL, and RoHS Certified: The device complies with international safety and environmental standards, ensuring safe and compliant usage across various markets.
Frequently Asked Questions
Q1: What is the maximum operating temperature of the IRFB4510GPBF?
A1: The IRFB4510GPBF can operate continuously at temperatures up to 175¡ãC, making it suitable for high-temperature applications.
Q2: Can the IRFB4510GPBF be used in automotive applications?
A2: Yes, the IRFB4510GPBF is designed to meet automotive standards and can be used in various automotive components such as power electronics and control systems.
Q3: In which specific scenarios would you recommend using the IRFB4510GPBF?
A3: The IRFB4510GPBF is recommended for scenarios requiring high power handling and efficiency, such as in high-frequency switching power supplies and inverter circuits.
Other people’s search terms
– Low on-state resistance MOSFETs
– Automotive-grade MOSFETs
– High-efficiency power MOSFETs
– Compact MOSFETs for portable devices
– Industrial-grade MOSFETs
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