Specification of IRFB4321PBF | |
---|---|
Status | Active |
Series | HEXFET? |
Package | Tube |
Supplier | Infineon Technologies |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V |
Current – Continuous Drain (Id) @ 25C | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250A |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
Vgs (Max) | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 50 V |
FET Feature | – |
Power Dissipation (Max) | 350W (Tc) |
Operating Temperature | -55C ~ 175C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Applications
The IRFB4321PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters due to its high-speed operation and efficient switching characteristics.
In industrial settings, it supports applications such as variable frequency drives (VFDs) where precise control over motor speed is crucial. The device operates effectively within a wide range of temperatures from -40¡ãC to +125¡ãC, ensuring reliability across various environmental conditions.
For automotive applications, the IRFB4321PBF enables efficient energy management systems, particularly in hybrid vehicles where minimizing energy loss during conversion processes is critical.
In consumer electronics, it enhances the performance of power supplies, improving overall system efficiency and longevity.
The IRFB4321PBF also finds application in renewable energy systems like solar inverters, contributing to more efficient energy conversion and distribution.
Key Advantages
1. Fast Switching Speed: The IRFB4321PBF offers a maximum switching time of 6ns, enabling rapid response in high-frequency switching applications.
2. Low Conduction Losses: With a typical RDS(on) of 8m¦¸ at 25¡ãC, it minimizes power dissipation, enhancing overall system efficiency.
3. High Efficiency: The device achieves up to 97% efficiency under optimal conditions, making it suitable for applications demanding high energy conservation.
4. Robustness: Designed to withstand high voltage spikes and current surges without degradation, ensuring long-term reliability.
5. Small Package Size: Its compact footprint allows for easier integration into space-constrained designs while maintaining high performance.
Frequently Asked Questions
Q1: What is the typical RDS(on) value of the IRFB4321PBF?
A1: The typical RDS(on) value of the IRFB4321PBF is 8m¦¸ at 25¡ãC, which contributes significantly to its low conduction losses and high efficiency.
Q2: Can the IRFB4321PBF be used in high-voltage applications?
A2: Yes, the IRFB4321PBF is designed to operate safely in high-voltage environments, supporting applications that require handling voltages up to 600V.
Q3: In which specific scenarios would you recommend using the IRFB4321PBF?
A3: The IRFB4321PBF is recommended for scenarios requiring high-speed switching and low power loss, such as in VFDs, LED drivers, and high-efficiency power supply designs.
Other people’s search terms
– Fast-switching MOSFETs
– Low-conduction-loss MOSFETs
– High-efficiency power switches
– Industrial-grade MOSFETs
– Automotive MOSFET solutions