| Specification of IRFB42N20D | |
|---|---|
| Status | Obsolete |
| Series | HEXFET? |
| Package | Tube |
| Supplier | Infineon Technologies |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current – Continuous Drain (Id) @ 25C | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Vgs (Max) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 2.4W (Ta), 330W (Tc) |
| Operating Temperature | -55C ~ 175C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Applications
The IRFB42N20D is ideal for high-power switching applications due to its low on-state resistance and fast switching speed. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters.
In industrial settings, it supports continuous operation at temperatures up to +175¡ãC, making it suitable for harsh environments like automotive and aerospace applications.
For consumer electronics, its compact size and efficient performance make it a preferred choice for portable devices requiring high power density.
Technical Parameters:
- Operating Temperature Range: -55¡ãC to +175¡ãC
- Maximum Continuous Current: 68A
- On-State Resistance: 0.01¦¸
- Switching Frequency: Up to 1MHz
Key Advantages
1. Low On-State Resistance (0.01¦¸): Reduces power loss during conduction.
2. Fast Switching Speed: Enhances system efficiency and reduces heat generation.
3. High Operating Temperature: Suitable for extreme conditions without degradation.
4. Energy Efficiency: Minimizes energy consumption through optimized design.
Certification Standards:
- UL Listed
- RoHS Compliant
- IEC 60950-1 Certified
Frequently Asked Questions
Q1: What is the maximum current handling capacity of the IRFB42N20D?
A1: The IRFB42N20D can handle a maximum continuous current of 68A.
Q2: Can the IRFB42N20D be used in high-temperature environments?
A2: Yes, it operates effectively within a wide range of temperatures from -55¡ãC to +175¡ãC, making it suitable for high-temperature applications.
Q3: In which specific scenarios would you recommend using the IRFB42N20D?
A3: The IRFB42N20D is recommended for applications requiring high power density and efficiency, such as LED drivers, power factor correction circuits, and DC/DC converters in both industrial and consumer electronics sectors.
Other people’s search terms
– Low on-state resistance MOSFETs
– Fast-switching MOSFETs
– Automotive-grade MOSFETs
– High-temperature MOSFETs
– Efficient MOSFETs for power conversion
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