| Specification of IRFB4229PBF | |
|---|---|
| Status | Active |
| Series | HEXFET? |
| Package | Tube |
| Supplier | Infineon Technologies |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current – Continuous Drain (Id) @ 25C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -40C ~ 175C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Applications
The IRFB4229PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It excels in power supply designs, particularly in systems that demand efficient energy conversion at high frequencies. This component is also suitable for automotive applications where reliability and performance under extreme conditions are critical.
Operating Temperature: -55¡ãC to +175¡ãC
Key Advantages
1. High Switching Speeds: The IRFB4229PBF offers ultra-fast switching times, making it perfect for high-frequency applications.
2. Advanced Gate Drive Circuitry: Its unique gate drive circuitry ensures optimal control over the device, enhancing its overall performance.
3. Low Conduction Losses: Designed to minimize power loss during operation, this part is highly efficient.
4. CE, RoHS, and UL Certifications: The IRFB4229PBF meets stringent international safety and environmental standards.
Frequently Asked Questions
Q1: What is the maximum operating frequency of the IRFB4229PBF?
A1: The IRFB4229PBF can operate effectively up to 600 kHz, which is ideal for many high-speed switching applications.
Q2: Is the IRFB4229PBF compatible with existing systems?
A2: Yes, the IRFB4229PBF is backward-compatible with most existing systems due to its similar pin configuration and electrical characteristics.
Q3: In which specific scenarios would you recommend using the IRFB4229PBF?
A3: The IRFB4229PBF is recommended for scenarios requiring high-frequency switching, such as in DC/DC converters for mobile devices and inverter circuits for renewable energy systems.
Other people’s search terms
– Fast-switching MOSFETs
– Automotive-grade MOSFETs
– High-frequency MOSFETs
– Efficient power switches
– Industrial-grade MOSFETs
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