Specification of IRFB4227PBF | |
---|---|
Status | Active |
Series | HEXFET? |
Package | Tube |
Supplier | Infineon Technologies |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current – Continuous Drain (Id) @ 25C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250A |
Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
Vgs (Max) | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
FET Feature | – |
Power Dissipation (Max) | 330W (Tc) |
Operating Temperature | -40C ~ 175C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Applications
The IRFB4227PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters due to its high-speed operation and efficient switching characteristics.
In industrial settings, it supports applications like variable frequency drives (VFDs) where precise control over motor speed is crucial. The device operates effectively within a wide range of temperatures (-40¡ãC to +125¡ãC), ensuring reliability across various environmental conditions.
For automotive applications, the IRFB4227PBF enables efficient energy management systems, contributing to improved fuel economy and reduced emissions. Its robust design makes it suitable for harsh environments typically found in vehicle electronics.
In renewable energy systems, such as solar inverters, the IRFB4227PBF helps optimize power conversion efficiency, making it a key component in harnessing solar energy more effectively.
The IRFB4227PBF also finds application in medical equipment where precision and reliability are paramount. Its ability to handle high-frequency switching without compromising performance makes it a preferred choice for critical monitoring devices.
Key Advantages
1. Fast Switching Speed: The IRFB4227PBF offers a maximum switching time of 6ns, enabling rapid response times essential for high-speed digital circuits.
2. Low Conduction Losses: With a typical RDS(on) of 8m¦¸ at 25¡ãC, the IRFB4227PBF minimizes power dissipation during operation, enhancing overall system efficiency.
3. High Efficiency: The device achieves up to 98% efficiency under optimal conditions, making it highly effective in power conversion applications.
4. Robust Design: Featuring a TO-252 package, the IRFB4227PBF can withstand high currents and voltages, ensuring long-term reliability in demanding environments.
5. Industry Standards Compliance: The IRFB4227PBF complies with various industry standards, including IEC, UL, and CE, ensuring safe and reliable integration into diverse applications.
Frequently Asked Questions
Q1: What is the typical RDS(on) value of the IRFB4227PBF?
A1: The typical RDS(on) value of the IRFB4227PBF is 8m¦¸ at 25¡ãC, which contributes significantly to its low conduction losses and high efficiency.
Q2: Can the IRFB4227PBF be used in high-temperature environments?
A2: Yes, the IRFB4227PBF is designed to operate effectively within a temperature range from -40¡ãC to +125¡ãC, making it suitable for both cold and hot environments.
Q3: In which specific scenarios would you recommend using the IRFB4227PBF?
A3: The IRFB4227PBF is recommended for scenarios requiring high-speed switching and low power loss, such as in VFDs, LED drivers, and high-frequency DC/DC converters. Its suitability extends to automotive, renewable energy, and medical applications where precise and efficient power management is critical.
Other people’s search terms
– Fast-switching MOSFETs
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