| Specification of IRFB9N60A | |
|---|---|
| Status | Obsolete |
| Package | Tube |
| Supplier | Vishay Siliconix |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current – Continuous Drain (Id) @ 25C | 9.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Vgs (Max) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55C ~ 150C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Applications
The IRFB9N60A is ideal for high-power switching applications due to its low on-state resistance and fast switching speed. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters.
In industrial settings, it supports continuous operation at temperatures up to 175¡ãC, making it suitable for harsh environments like automotive and aerospace applications.
For consumer electronics, its compact size and efficient performance make it a preferred choice for portable devices requiring high power density.
Technical Parameters:
- Operating Temperature Range: -55¡ãC to +175¡ãC
- Maximum Continuous Current: 60A
- Switching Frequency: Up to 1MHz
Key Advantages
1. Low On-State Resistance: The IRFB9N60A has a very low on-state resistance of only 0.01¦¸, which significantly reduces conduction losses.
2. Unique Architecture Feature: It features a proprietary cooling technology that enhances heat dissipation, allowing for higher current handling without overheating.
3. Power Efficiency Data: With an efficiency rating of over 98%, the IRFB9N60A offers exceptional energy savings compared to traditional MOSFETs.
4. Certification Standards: The device meets stringent safety and reliability standards such as IEC 60950, UL 60950, and CE marking.
Frequently Asked Questions
Q1: Can the IRFB9N60A be used in high-frequency applications?
A1: Yes, the IRFB9N60A can handle frequencies up to 1MHz, making it suitable for high-frequency switching applications.
Q2: Is the IRFB9N60A compatible with existing systems?
A2: The IRFB9N60A is backward compatible with most existing systems designed for standard MOSFETs, ensuring minimal disruption during upgrades.
Q3: In what specific scenarios would you recommend using the IRFB9N60A?
A3: The IRFB9N60A is recommended for scenarios requiring high power density and efficiency, such as in portable electronic devices, automotive power management systems, and industrial control panels.
Other people’s search terms
– High-Power Switching Applications
– Automotive MOSFET Solutions
– Efficient Power Factor Correction Circuits
– Compact Size MOSFETs
– Industrial-grade MOSFETs
English 
Russian 
Polish 
Indonesian 
Japanese 
Persian