| Specification of IRFB5615PBF | |
|---|---|
| Status | Active |
| Package | Tube |
| Supplier | Infineon Technologies |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current – Continuous Drain (Id) @ 25C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 21A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100A |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 50 V |
| FET Feature | – |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55C ~ 175C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Applications
The IRFB5615PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters due to its high-speed operation and efficient performance.
In industrial settings, it supports applications such as variable frequency drives (VFDs) where precise control over motor speed is crucial. The device operates effectively within a wide range of temperatures from -40¡ãC to +125¡ãC, ensuring reliability across various environments.
For automotive applications, the IRFB5615PBF enables efficient energy management systems, contributing to improved fuel economy and reduced emissions. Its robust design makes it suitable for harsh conditions typically found in vehicle electronics.
Key Advantages
1. Fast Switching Speed: The IRFB5615PBF offers a maximum switching time of 7ns, making it highly effective in high-frequency applications.
2. Unique Architecture Feature: Incorporates a proprietary gate drive technology that enhances the device¡¯s immunity to electromagnetic interference (EMI).
3. Power Efficiency Data: Achieves a typical RDS(on) of 8m¦¸ at 25¡ãC, significantly reducing power loss during operation.
4. Certification Standards: Meets stringent industry certifications including IEC, CE, and RoHS compliance, ensuring safe and reliable usage in diverse markets.
Frequently Asked Questions
Q1: What is the typical RDS(on) value of the IRFB5615PBF?
A1: The typical RDS(on) value of the IRFB5615PBF is 8m¦¸ at 25¡ãC, which contributes to its high power efficiency.
Q2: Can the IRFB5615PBF be used in automotive applications?
A2: Yes, the IRFB5615PBF is designed to meet the stringent requirements of automotive environments, providing reliable performance in harsh conditions.
Q3: In which specific scenarios would you recommend using the IRFB5615PBF?
A3: The IRFB5615PBF is recommended for scenarios requiring high-speed switching and low power loss, such as in VFDs, LED drivers, and DC/DC converters, particularly in industries like manufacturing, telecommunications, and renewable energy.
Other people’s search terms
– High-speed switching MOSFETs
– Low-conduction-loss MOSFETs
– Automotive-grade MOSFETs
– Industrial MOSFETs
– Efficient power conversion solutions
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