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IRFB7430PBF

Part Number IRFB7430PBF
Manufacturer Infineon Technologies
Description MOSFET N CH 40V 195A TO220
Datasheets Download IRFB7430PBF Datasheet PDFPDF Icon
Price for IRFB7430PBF
Specification of IRFB7430PBF
Status Active
Series HEXFET?, StrongIRFET?
Package Tube
Supplier Infineon Technologies
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current – Continuous Drain (Id) @ 25C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250A
Gate Charge (Qg) (Max) @ Vgs 460 nC @ 10 V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 14240 pF @ 25 V
FET Feature
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55C ~ 175C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Applications

The IRFB7430PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters due to its high-speed operation and efficient switching characteristics.

In industrial settings, it supports applications such as variable frequency drives (VFDs) where precise control over motor speed is crucial. The device operates effectively within a wide range of temperatures (-40¡ãC to +125¡ãC), ensuring reliability across various environmental conditions.

For automotive applications, the IRFB7430PBF enables efficient energy management systems, particularly in hybrid vehicles where minimizing energy loss during conversion processes is critical.

In consumer electronics, it enhances the performance of power supplies, improving overall system efficiency and longevity.

The IRFB7430PBF also finds application in renewable energy systems like solar inverters, contributing to more efficient energy conversion from solar panels to usable electricity.

Key Advantages

1. Fast Switching Speed: The IRFB7430PBF offers a maximum switching time of 6ns, making it suitable for high-frequency applications.

2. Low Conduction Losses: With a typical RDS(on) of 8m¦¸ at 25¡ãC, it minimizes power dissipation, enhancing overall system efficiency.

3. High Efficiency: The device achieves up to 98% efficiency under optimal conditions, reducing heat generation and extending component lifespan.

4. Robustness: Designed for industrial environments, it withstands harsh conditions with a specified operating temperature range of -40¡ãC to +125¡ãC.

5. Certifications: The IRFB7430PBF complies with various industry standards, including RoHS and IEC, ensuring compliance with global regulations.

Frequently Asked Questions

Q1: What is the typical RDS(on) value of the IRFB7430PBF?

A1: The typical RDS(on) value of the IRFB7430PBF is 8m¦¸ at 25¡ãC, which contributes significantly to its low conduction losses and high efficiency.

Q2: Can the IRFB7430PBF be used in automotive applications?

A2: Yes, the IRFB7430PBF is well-suited for automotive applications, especially in systems that require precise control and high efficiency, such as variable frequency drives and energy management systems.

Q3: In which specific scenarios does the IRFB7430PBF excel?

A3: The IRFB7430PBF excels in scenarios requiring rapid switching times and minimal power loss, such as in high-frequency switching modes found in power factor correction circuits and LED drivers.

Other people’s search terms

– Fast-switching MOSFETs

– Low-conduction-loss MOSFETs

– Industrial-grade MOSFETs

– Automotive MOSFETs

– High-efficiency MOSFETs

Procurement advantages

1.Fast quote response guaranteed within 24 hours via email or ERP system integration.
2.Global express delivery options ensure components arrive within 48 hours from order confirmation.
3.Inventory exceeding ten million units across multiple warehouses guarantees stock availability.
4.Full BOM LIST procurement support with automated component matching.
5.Free samples available for testing; bulk orders qualify for tiered pricing discounts.

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