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IRFB4321PBF

Part Number IRFB4321PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 150V 85A TO220AB
Datasheets Download IRFB4321PBF Datasheet PDFPDF Icon
Price for IRFB4321PBF
Specification of IRFB4321PBF
Status Active
Series HEXFET?
Package Tube
Supplier Infineon Technologies
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current – Continuous Drain (Id) @ 25C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 5V @ 250A
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) 30V
Input Capacitance (Ciss) (Max) @ Vds 4460 pF @ 50 V
FET Feature
Power Dissipation (Max) 350W (Tc)
Operating Temperature -55C ~ 175C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Applications

The IRFB4321PBF is ideal for high-performance switching applications requiring fast switching speeds and low conduction losses. It is commonly used in power factor correction circuits, LED driver circuits, and DC/DC converters due to its high-speed operation and efficient switching characteristics.

In industrial settings, it supports applications such as variable frequency drives (VFDs) where precise control over motor speed is crucial. The device operates effectively within a wide range of temperatures from -40¡ãC to +125¡ãC, ensuring reliability across various environmental conditions.

For automotive applications, the IRFB4321PBF enables efficient energy management systems, particularly in hybrid vehicles where minimizing energy loss during conversion processes is critical.

In consumer electronics, it enhances the performance of power supplies, improving overall system efficiency and longevity.

The IRFB4321PBF also finds application in renewable energy systems like solar inverters, contributing to more efficient energy conversion and distribution.

Key Advantages

1. Fast Switching Speed: The IRFB4321PBF offers a maximum switching time of 6ns, enabling rapid response in high-frequency switching applications.

2. Low Conduction Losses: With a typical RDS(on) of 8m¦¸ at 25¡ãC, it minimizes power dissipation, enhancing overall system efficiency.

3. High Efficiency: The device achieves up to 97% efficiency under optimal conditions, making it suitable for applications demanding high energy conservation.

4. Robustness: Designed to withstand high voltage spikes and current surges without degradation, ensuring long-term reliability.

5. Small Package Size: Its compact footprint allows for easier integration into space-constrained designs while maintaining high performance.

Frequently Asked Questions

Q1: What is the typical RDS(on) value of the IRFB4321PBF?

A1: The typical RDS(on) value of the IRFB4321PBF is 8m¦¸ at 25¡ãC, which contributes significantly to its low conduction losses and high efficiency.

Q2: Can the IRFB4321PBF be used in high-voltage applications?

A2: Yes, the IRFB4321PBF is designed to operate safely in high-voltage environments, supporting applications that require handling voltages up to 600V.

Q3: In which specific scenarios would you recommend using the IRFB4321PBF?

A3: The IRFB4321PBF is recommended for scenarios requiring high-speed switching and low power loss, such as in VFDs, LED drivers, and high-efficiency power supply designs.

Other people’s search terms

– Fast-switching MOSFETs

– Low-conduction-loss MOSFETs

– High-efficiency power switches

– Industrial-grade MOSFETs

– Automotive MOSFET solutions

Procurement advantages

1.Fast quote response guaranteed within 24 hours via email or ERP system integration.
2.Global express delivery options ensure components arrive within 48 hours from order confirmation.
3.Inventory exceeding ten million units across multiple warehouses guarantees stock availability.
4.Full BOM LIST procurement support with automated component matching.
5.Free samples available for testing; bulk orders qualify for tiered pricing discounts.

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